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Eta Research Ltd. is committed to developing the highest quality free-standing GaN wafer. With the use of self-developed HVPE equipment, Eta has successfully grown free-standing GaN wafers in 4 inch size. 

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Eta Research Ltd

Eta Research Ltd. is a high-tech company set up in April 2015. Eta focuses on growing large size high-quality GaN wafers which can be produced for an affordable price for semiconductor industries. The company has adopted self-developed HVPE as the production method for GaN wafers. Eta is located in Shanghai China and intends to become a leading company in China’s plan for the 3rd generation semiconductor industry. In the coming years, Eta plans to build the largest GaN wafer factory in the world, so as to entitle GaN wafers to become widely used in the semiconductor materials market. In terms of strategic development, with the help of quality free-standing GaN wafers, Eta intends to research and enable high-end LED, power electronics, and other devices, so as to promote long-term plan of developing the whole industry chain. 


Eta was created by and is managed by Dr. Qiming Li and Dr. Troy Baker; international senior experts in wide band-gap semiconductors. The company has built a professional R&D team, equipped with high education background and technical knowledge. In the team, over half of the total staff achieved a master or higher educational degree. 


The name Eta Research was chosen to reflect the importance of energy efficiency to the company’s products and technology. The symbol η, called eta, is used in scientific fields to represent efficiency. Eta’s corporate vision is to create and produce efficient semiconductor products through scientific learning to make a positive contribution to the development of the global semiconductor industry and promote high efficient energy conversion devices. All employees in Eta Research have been working sedulously and consistently to contribute to a better future for semiconductor industry. 


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As the world's leading free-standing GaN substrate manufacturer, Eta Research is the only company in China that can produce 4-inch free-standing GaN substrates on a large scale. Our 4-inch gallium nitride (GaN) self-supporting substrate is a monocrystalline GaN substrate produced by self-developed HVPE equipment, and the specific parameters can be customized according to customer needs.

1. Product display

image.pngimage.png

      2. Product detail

According to the different doping, the substrates are divided into the following three types:

Product

GaN  thickness

 Conductivity type 

Doping

Size

Surface treatment

Back treatment

N-type

GaN substrate

450um (customized)

n   type

Si/Ge

4”

Polish

Etch/Polish

UID GaN substrate

450um (customized)

n   type

Unintentional doping

4”

Polish

Etch/Polish

Semi-insulating

GaN substrate

450um (customized)

Semi-insulating

C

4”

Polish

Etch/Polish

     3. Production process

HVPE crystal growth——cutting——grinding——polishing


     4. Laser mark

1705374628814.png

 Schematic diagram of laser mark for major flat 

      5. Electrical resistivity test

image.png


                                     Resistivity test point 

The resistivity test point of N-type doped GaN wafer products is shown in the above figure, and the average value of 17 points is taken. Eta takes advantage of SEMILAB non-contact eddy current resistivity tester (model: 1510EA-SA). N-type GaN substrates with different doping concentrations can be customized for customers, as shown in the following table:


Customizable doping

Actual test value of resistivity

Concentration of doping

 

 

N-type GaN substrates

低 Si 掺杂

<0.02ohm-cm

≈1.00E18

中 Si 掺杂

<0.015ohm-cm

≈2.00E18

高 Si 掺杂

<0.012ohm-cm

≈3.00E18

For the semi-insulating GaN substrates, Eta entrusts the third party testing institution to adopt the German COREMA-WT equipment to test the resistivity. The tested resistivity is more than 1.00E12 ohm-cm;

       6. Measurement location and equipment for some parameters

 

Parameter

 

Test point

 

Test equipment and model

 

Figure

 

 

 

Thickness

 

1705374949980.jpg

 

 

 

MicroSense   UMS-200-BPBT

 

1705374980447.jpg

 

 

 

TTV/Bow

 

 

 

Overall test

 

 

 

Tropel FlatMaster 200

 

1705374996424.jpg

 

 

 

Roughness   Sa

 

1705374965749.jpg

 

 

 

AFM

Dimension   EDGE

 

1705375026058.jpg

       7. Technical specification

Item

Specification

 

Crystal specification

 

ProductionP grade 

 

ResearchR grade

 

DummyD grade 

Crystal   type

Single   crystal

Orientation

(0   0 0 1) Ga face

C-plane off angle toward   M-axis

0.5° ± 0.15°

C-plane off angle toward   A-axis

 

0° ± 0.15°

(0   0 2)  (002) FWHM

<   80  arcsec

(1   0 2)  (102) FWHM

<   80  arcsec

 

 

 Electrical specification

Doping elements

Room   temperature resistivity (300K)

N-type (Silicon)

≤ 0.05 ohm-cm

UID

≤   0.2 ohm-cm

Semi-Insulating (Carbon)

> 1E8 ohm-cm

Shape specification

Major flat orientation

 M-plane   (10-10),±2° (standard);

Major flat length

32±1 mm

Minor flat orientation

 

Ga face,   90°clockwise from the major orientation flat plane

Minor flat length

18±1 mm

Diameter

100.0±0.3mm

Thickness

450 ±30 um

TTV

≤30 um

Sa

≤  0.3 nm (10 um×10 um)

Bow

-30 um −30 um

Quantity and maximum size   of holes and pits

 

≤40@1000 um

 

≤80@1500 um

 

≤ 160@1500 um

Edge bevel

Beveled

Back-side  surface

Polished;   Etched





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