Eta Research is a Chinese company that was founded in 2015 with the main purpose to develop free-standing GaN wafers. They now report the successful production of 100 mm GaN wafers.  

Eta Research uses the HVPE method to produce GaN wafers. The company has self-developed both their HVPE equipment and production process. A key process technology is the method of GaN separation from the substrate. Eta Research has developed a unique method, not used by other companies in the industry, which greatly improves the yields and enhances the crystal quality. Additionally, the company uses high quality polishing equipment purchased from a reputable vendor with experience polishing GaN wafers.

The current production equipment can produce entire uncracked 100 mm GaN wafers, but due to edge effects, the finished wafers must be cut to a smaller size. The company will soon be offering 2” and 3” GaN wafers for sale. They plan to retool to a larger size to produce 100 mm finished GaN wafers by 2019.

The company’s R&D lab is located in Shanghai, China. Construction is already underway for a high capacity production facility located in Tongling, Anhui Province, China.  

According to their CEO; “Our goal is to improve the energy efficiency and performance of GaN-based devices by using GaN substrates. In order for that to happen on a large scale, GaN substrates must become widely available for a reasonable price. We intend to control the cost through our new high yield separation process and the large scale of our new factory, while delivering a product with the characteristics – size, crystal quality, lattice curvature, electrical conductivity, and surface finish – that our customers require.”

For additional information, see www.etaresearch.com. Email inquiries can be sent to info@etaresearch.com.