The 7th International Symposium on Growth of III-Nitrides(hereinafter named as ISGN-7) will be held from August 5th to 10th,2018, in Warsaw, Poland. This symposium follows the 1st symposium held in Linköping, Sweden; the 2nd in lzu, Japan; the 3rd in Montpellier, France; the 4th in St.Petersburg, Russia; the 5th in Atlanta, USA and the 6th in Hamamatsu, Japan. 

This symposium will be focused on the recent progress and future directions in the field of bulk crystallization, thin film growth and fabrication of nanostructures of III-nitrides. These aspects will be discussed in the context of applications in optoelectronic as well as in high power electronic devices. In this symposium, experts across the world will discuss such following topics as bulk growth of III-nitrides, epitaxial growth of III-nitrides, growth of nitride nanostructures, characterization, devices, applications of crystals and structures in electronic devices, applications of crystals and structures in optoelectronics in particular. 

To get the latest progress of growth of III-Nitrides and exchange views with professional talents, technical engineers of Eta Research signed up themself for this symposium for absorbing more useful knowledge in this regard, thus further optimizing GaN wafer growth process in a more efficient way. Eta has successfully grown 3 inch free-standing GaN wafers, which are ready to be sold to our potential customers around the world. Moreover, company leaders will lead the technical team as a exhibitor to participate in the IWN2018, held in Kanazawa, Japan, so as to promote our quality GaN wafers in the global market widely.